1. Crystallography and Material Principles of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic substance made up of silicon and carbon atoms in a 1:1 stoichiometric ratio, differentiated by its remarkable polymorphism– over 250 recognized polytypes– all sharing strong directional covalent bonds but varying in piling series of Si-C bilayers.
The most technically pertinent polytypes are 3C-SiC (cubic zinc blende framework), and the hexagonal forms 4H-SiC and 6H-SiC, each displaying subtle variants in bandgap, electron flexibility, and thermal conductivity that affect their viability for certain applications.
The stamina of the Si– C bond, with a bond power of about 318 kJ/mol, underpins SiC’s remarkable solidity (Mohs firmness of 9– 9.5), high melting factor (~ 2700 ° C), and resistance to chemical degradation and thermal shock.
In ceramic plates, the polytype is generally selected based on the planned usage: 6H-SiC prevails in architectural applications due to its convenience of synthesis, while 4H-SiC controls in high-power electronics for its superior fee provider mobility.
The vast bandgap (2.9– 3.3 eV depending on polytype) additionally makes SiC an outstanding electrical insulator in its pure type, though it can be doped to work as a semiconductor in specialized electronic gadgets.
1.2 Microstructure and Phase Pureness in Ceramic Plates
The performance of silicon carbide ceramic plates is critically dependent on microstructural functions such as grain size, density, phase homogeneity, and the presence of additional phases or contaminations.
Premium plates are typically fabricated from submicron or nanoscale SiC powders via advanced sintering methods, resulting in fine-grained, fully thick microstructures that optimize mechanical toughness and thermal conductivity.
Impurities such as totally free carbon, silica (SiO ₂), or sintering help like boron or aluminum have to be meticulously controlled, as they can form intergranular films that decrease high-temperature strength and oxidation resistance.
Recurring porosity, even at low levels (
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