1. Product Science and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms prepared in a tetrahedral lattice, mainly in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing phenomenal atomic bond toughness.
The Si– C bond, with a bond energy of around 318 kJ/mol, is amongst the best in structural ceramics, providing exceptional thermal security, firmness, and resistance to chemical assault.
This robust covalent network results in a material with a melting point surpassing 2700 ° C(sublimes), making it one of one of the most refractory non-oxide porcelains readily available for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC maintains mechanical toughness and creep resistance at temperature levels above 1400 ° C, where many steels and standard porcelains begin to soften or weaken.
Its low coefficient of thermal expansion (~ 4.0 × 10 ⁻⁶/ K) integrated with high thermal conductivity (80– 120 W/(m · K)) allows quick thermal biking without devastating breaking, a critical quality for crucible efficiency.
These innate properties originate from the well balanced electronegativity and similar atomic dimensions of silicon and carbon, which advertise a highly secure and densely loaded crystal framework.
1.2 Microstructure and Mechanical Strength
Silicon carbide crucibles are generally produced from sintered or reaction-bonded SiC powders, with microstructure playing a decisive function in longevity and thermal shock resistance.
Sintered SiC crucibles are created with solid-state or liquid-phase sintering at temperature levels above 2000 ° C, usually with boron or carbon additives to enhance densification and grain border communication.
This process yields a fully thick, fine-grained structure with very little porosity (
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